Datasheet > BSS84-NL

BSS84-NL

更新时间： 2024-09-26 12:52:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	144K
描述
â0.13A, â50V. RDS(ON) = 10Î© @ VGS = â5 V

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BSS84-NL 数据手册

July 2002

BSS84

P-Channel Enhancement Mode Field Effect Transistor

Features

General Description

These P-Channel enhancement mode field effect

transistors are produced using Fairchild’s proprietary,

high cell density, DMOS technology. This very high

density process has been designed to minimize on-

state resistance, provide rugged and reliable

performance and fast switching. They can be used, with

a minimum of effort, in most applications requiring up to

0.13A DC and can deliver current up to 0.52A.

•

−0.13A, −50V. R_DS(ON)= 10Ω @ V_GS= −5 V

•

Voltage controlled p-channel small signal switch

High density cell design for low R_DS(ON)

•

High saturation current

This product is particularly suited to low voltage

applications requiring a low current high side switch.

SOT-23

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

−50

Units

V_GSS

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±20

I_D

(Note 1)

−0.13

−0.52

0.36

Maximum Power Dissipation

Derate Above 25°C

P_D

mW/°C

2.9

T_J, T_STG

T_L

Operating and Storage Junction Temperature Range

−55 to +150

°C

Maximum Lead Temperature for Soldering

Purposes, 1/16” from Case for 10 Seconds

300

350

Thermal Characteristics

R_θJA

Thermal Resistance, Junction-to-Ambient

(Note 1)

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

BSS84

7’’

8mm

3000 units

BSS84 Rev B(W)

2002 Fairchild Semiconductor Corporation

12 3 4 5

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