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BSS84LT1/D PDF预览

BSS84LT1/D

更新时间: 2024-02-07 09:28:52
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其他 - ETC /
页数 文件大小 规格书
8页 75K
描述
Power MOSFET 130 mAmps, 50 Volts

BSS84LT1/D 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-23包装说明:ROHS COMPLIANT, MINIATURE, CASE 318-08, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:10 weeks风险等级:0.46
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:224528Samacsys Pin Count:3
Samacsys Part Category:MOSFET (P-Channel)Samacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08Samacsys Released Date:2015-07-28 07:02:39
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:50 V最大漏极电流 (Abs) (ID):0.13 A
最大漏极电流 (ID):0.13 A最大漏源导通电阻:10 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.225 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BSS84LT1/D 数据手册

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BSS84LT1  
Preferred Device  
Power MOSFET  
130 mAmps, 50 Volts  
P–Channel SOT–23  
These miniature surface mount MOSFETs reduce power loss  
conserve energy, making this device ideal for use in small power  
management circuitry. Typical applications are dc–dc converters, load  
switching, power management in portable and battery–powered  
products such as computers, printers, cellular and cordless telephones.  
http://onsemi.com  
130 mAMPS  
50 VOLTS  
Energy Efficient  
Miniature SOT–23 Surface Mount Package Saves Board Space  
R
= 10 W  
DS(on)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
P–Channel  
3
J
Rating  
Drain–to–Source Voltage  
Gate–to–Source Voltage – Continuous  
Drain Current  
Symbol  
V
Value  
50  
Unit  
Vdc  
Vdc  
mA  
DSS  
V
GS  
± 20  
1
– Continuous @ T = 25°C  
I
130  
520  
A
D
– Pulsed Drain Current (t 10 µs)  
I
p
DM  
Total Power Dissipation @ T = 25°C  
P
225  
mW  
A
D
2
Operating and Storage Temperature  
Range  
T , T  
J
– 55 to  
150  
°C  
stg  
MARKING  
DIAGRAM  
Thermal Resistance – Junction–to–Ambient  
R
556  
260  
°C/W  
°C  
θJA  
Maximum Lead Temperature for Soldering  
Purposes, for 10 seconds  
T
L
3
SOT–23  
CASE 318  
STYLE 21  
PD  
W
1
2
W
= Work Week  
PIN ASSIGNMENT  
Drain  
3
1
Gate  
2
Source  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BSS84LT1  
SOT–23 3000 Tape & Reel  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2000 – Rev. 2  
BSS84LT1/D  

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