Datasheet > BSS84LT1_12

BSS84LT1_12

更新时间： 2024-01-14 23:53:46

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	104K
描述
Power MOSFET Single P-Channel SOT-23 -50 V, 10

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数据手册

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BSS84LT1_12 数据手册

BSS84LT1, SBSS84LT1

Power MOSFET

Single P-Channel SOT-23

-50 V, 10 W

• SOT−23 Surface Mount Package Saves Board Space

• AEC Q101 Qualified − SBSS84LT1

• These Devices are Pb−Free and are RoHS Compliant

http://onsemi.com

DS(ON)

MAX

(BR)DSS

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

−50 V

10 W @ 10 V

Rating

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Drain Current

Symbol

Value

Unit

Vdc

P−Channel

DSS

Continuous @ T = 25°C

130

520

Pulsed Drain Current (t ≤ 10 ms)

Total Power Dissipation @ T = 25°C

225

Operating and Storage Temperature

Range

T , T

− 55 to

150

°C

stg

Thermal Resistance − Junction−to−Ambient

556

260

°C/W

°C

Maximum Lead Temperature for Soldering

Purposes, for 10 seconds

SOT−23

CASE 318

STYLE 21

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MARKING DIAGRAM & PIN ASSIGNMENT

Drain

PD MG

Gate

Source

= Specific Device Code

= Date Code

= Pb−Free Package

(*Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

Package

Shipping

BSS84LT1G

SOT−23

3000 / Tape & Reel

(Pb−Free)

SBSS84LT1G

SOT−23

3000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

March, 2012 − Rev. 7

BSS84LT1/D

12 3 4

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