Datasheet > BSO-302SN

BSO-302SN

更新时间： 2024-11-20 22:27:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	379K
描述
SIPMOS Small-Signal-Transistor

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中文翻译

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数据手册

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BSO-302SN 数据手册

Preliminary Data

BSO 302SN



SIPMOS Small-Signal-Transistor

Product Summary

Features

Drain source voltage

0.013

9.8

• Single N channel

• Enhancement mode

• Avalanche rated

• Logic Level

Drain-Source on-state resistance

Continuous drain current

Ω

DS(on)

• dv/dt rated

Type

Package

Ordering Code

BSO 302SN

SO 8

Q67041-S4029

Maximum Ratings, at T = 25 ˚C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

9.8

T = 25 ˚C

Pulsed drain current

39.2

250

IDpulse

T = 25 ˚C

Avalanche energy, single pulse

I = 9.8 A, V = 25 V, R = 25 Ω

9.8

0.2

Avalanche current,periodic limited by T

jmax

Avalanche energy, periodic limited by T

Reverse diode dv/dt

jmax

kV/µs

dv/dt

I = 9.8 A, V = 24 V, di/dt = 200 A/µs,

= 150 ˚C

jmax

Gate source voltage

Power dissipation

± ± 2

tot

T = 25 ˚C

Operating temperature

-55 ... +150

55/150/56

˚C

Storage temperature

stg

IEC climatic category; DIN IEC 68-1

Data Sheet

05.99

12 3 4 5 6 7 8

中文翻译

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