Datasheet > BS170_01

BS170_01

更新时间： 2024-09-28 03:22:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
13页	517K
描述
N-Channel Enhancement Mode Field Effect Transistor

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BS170_01 数据手册

April 1995

BS170 / MMBF170

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

High density cell design for low R_DS(ON).

These

N-Channel enhancement mode field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. These products have been

designed to minimize on-state resistance while provide

rugged, reliable, and fast switching performance. They can

be used in most applications requiring up to 500mA DC.

These products are particularly suited for low voltage, low

current applications such as small servo motor control,

power MOSFET gate drivers, and other switching

applications.

Voltage controlled small signal switch.

Rugged and reliable.

High saturation current capability.

_______________________________________________________________________________

Absolute Maximum Ratings

Symbol Parameter

T_A= 25°C unless otherwise noted

BS170

MMBF170

Units

Drain-Source Voltage

V_DSS

V_DGR

Drain-Gate Voltage (R_GS< 1MW)

Gate-Source Voltage

± 20

V_GSS

I_D

Drain Current - Continuous

- Pulsed

500

1200

830

6.6

500

800

300

2.4

P_D

Maximum Power Dissipation

Derate Above 25°C

mW/°C

°C

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to 150

300

Maximum Lead Temperature for Soldering

Purposes, 1/16" from Case for 10 Seconds

°C

THERMAL CHARACTERISTICS

Thermal Resistacne, Junction-to-Ambient

150

417

°C/W

R_q_JA

BS170 Rev. C / MMBF170 Rev. D

12 3 4 5 6 7...13

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与BS170_01相关器件

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BS170_05	ONSEMI	获取价格	Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226)
BS170_D26Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
BS170_D27Z	FAIRCHILD	获取价格	N-Channel Enhancement Mode Field Effect Transistor, 3LD, TO-92, MOLDED, 0.200 IN LINE SPAC
BS170A	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
BS170-A	DIODES	获取价格	300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
BS170AMO	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 500MA I(D) \| TO-92
BS170B	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
BS170D10Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
BS170D11Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
BS170-D26Z	ONSEMI	获取价格	单N沟道小信号MOSFET，60V，500mA，5Ω