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BS170E6288 PDF预览

BS170E6288

更新时间: 2024-11-16 20:05:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 87K
描述
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN

BS170E6288 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.02
其他特性:LOGIC LEVEL COMPATIBLE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):0.3 A
最大漏源导通电阻:5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):10 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BS170E6288 数据手册

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BS 170  
®
SIPMOS Small-Signal Transistor  
• N channel  
• Enhancement mode  
• Logic Level  
• V  
= 0.8...2.0V  
GS(th)  
Pin 1  
S
Pin 2  
G
Pin 3  
D
Type  
Package  
Marking  
VDS  
60 V  
ID  
RDS(on)  
BS 170  
0.3 A  
5
TO-92  
BS 170  
Type  
Ordering Code  
Tape and Reel Information  
BS 170  
Q67000-S076  
E6288  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Drain source voltage  
Drain-gate voltage  
V
60  
V
DS  
V
DGR  
= 20 k  
R
60  
GS  
Gate source voltage  
V
± 20  
GS  
ESD Sensitivity (HBM) as per MIL-STD 883  
Continuous drain current  
Class 1  
I
A
D
T = 25 ˚C  
0.3  
A
DC drain current, pulsed  
I
Dpuls  
T = 25 ˚C  
1.2  
A
Power dissipation  
P
W
tot  
T = 25 ˚C  
0.63  
A
Data Sheet  
1
05.99  

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