Datasheet > BS170FTA

BS170FTA

更新时间： 2024-09-14 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	845K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:0.15mA;Vgs(th)(V):±20;漏源导通电阻:3300mΩ@10V;漏源导通电阻:3300mΩ@4.5V

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BS170FTA 数据手册

BS170FTA

N-Channel 60 V (D-S) MOSFET

UMW

SOT–23

PRODUCT SUMMARY

V_DS(V)

R_DS(on)(mΩ)

I_D(mA)

2.8 at V_GS= 10 V

250

FEATURES

1. GATE

•

Halogen-free According to IEC 61249-2-21

Definition

2. SOURCE

3. DRAIN

•

Low Threshold: 2 V (typ.)

Low Input Capacitance: 25 pF

Fast Switching Speed: 25 ns

Low Input and Output Leakage

TrenchFET^®Power MOSFET

1200V ESD Protection

• Compliant to RoHS Directive 2002/95/EC

BENEFITS

•

Low Offset Voltage

Low-Voltage Operation

Easily Driven Without Buffer

High-Speed Circuits

Low Error Voltage

N-Channel MOSFET

APPLICATIONS

•

Direct Logic-Level Interface: TTL/CMOS

Drivers: Relays, Solenoids, Lamps, Hammers, Display,

Memories, Transistors, etc.

•

Battery Operated Systems

Solid-State Relays

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

V_GS

I_D

I_DM

P_D

Gate-Source Voltage

± 20

250

T_A= 25 °C

Continuous Drain Current (T_J= 150 °C)^b

T_A= 100 °C

150

800

Pulsed Drain Current^a

Power Dissipation^b

T_A= 25 °C

T_A= 100 °C

0.30

0.13

Maximum Junction-to-Ambient^b

350

°C/W

°C

R_thJA

T_J,T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

Notes:

a. Pulse width limited by maximum junction temperature.

b. Surface Mounted on FR4 board.

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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