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BS170D29Z PDF预览

BS170D29Z

更新时间: 2024-11-16 20:53:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
14页 1256K
描述
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN

BS170D29Z 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.56
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):0.5 A
最大漏源导通电阻:5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):10 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BS170D29Z 数据手册

 浏览型号BS170D29Z的Datasheet PDF文件第2页浏览型号BS170D29Z的Datasheet PDF文件第3页浏览型号BS170D29Z的Datasheet PDF文件第4页浏览型号BS170D29Z的Datasheet PDF文件第5页浏览型号BS170D29Z的Datasheet PDF文件第6页浏览型号BS170D29Z的Datasheet PDF文件第7页 
March 2009  
BS170 / MMBF170  
N-Channel Enhancement Mode Field Effect Transistor  
Features  
General Description  
These N-Channel enhancement mode field effect  
transistors are produced using Fairchild's proprietary, high  
cell density, DMOS technology. These products have been  
designed to minimize on-state resistance while provide  
rugged, reliable, and fast switching performance. They can  
be used in most applications requiring up to 500mA DC.  
These products are particularly suited for low voltage, low  
current applications such as small servo motor control,  
power MOSFET gate drivers, and other switching  
applications.  
High density cell design for low RDS(ON)  
Voltage controlled small signal switch.  
Rugged and reliable.  
.
High saturation current capability.  
D
S
D
G
G
S
TO - 92  
SOT - 23  
Absolute Maximum Ratings Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
BS170  
MMBF170  
Units  
VDSS  
Drain-Source Voltage  
60  
60  
V
V
VDGR  
VGSS  
ID  
Drain-Gate Voltage (RGS 1MΩ)  
Gate-Source Voltage  
± 20  
V
Drain Current - Continuous  
- Pulsed  
500  
500  
800  
mA  
1200  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
- 55 to 150  
300  
°C  
°C  
Maximum Lead Temperature for Soldering  
Purposes, 1/16" from Case for 10 Seconds  
Thermal Characteristics Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
BS170  
MMBF170  
Units  
PD  
Maximum Power Dissipation  
Derate above 25°C  
830  
6.6  
300  
2.4  
mW  
mW/°C  
RθJA  
Thermal Resistance, Junction to Ambient  
150  
417  
°C/W  
© 2009 Fairchild Semiconductor Corporation  
BS170 / MMBF170 Rev. E1  
www.fairchildsemi.com  
1

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