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BS170-D74Z PDF预览

BS170-D74Z

更新时间: 2024-11-17 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 开关小信号场效应晶体管
页数 文件大小 规格书
4页 56K
描述
单N沟道小信号MOSFET,60V,500mA,5Ω

BS170-D74Z 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
风险等级:0.58配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):0.5 A
最大漏极电流 (ID):0.5 A最大漏源导通电阻:5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):10 pF
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.83 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BS170-D74Z 数据手册

 浏览型号BS170-D74Z的Datasheet PDF文件第2页浏览型号BS170-D74Z的Datasheet PDF文件第3页浏览型号BS170-D74Z的Datasheet PDF文件第4页 
BS170  
Preferred Device  
Small Signal MOSFET  
500 mA, 60 V  
N−Channel TO−92 (TO−226)  
Features  
http://onsemi.com  
Pb−Free Package is Available*  
500 mA, 60 V  
RDS(on) = 5 W  
MAXIMUM RATINGS  
Rating  
DrainSource Voltage  
Symbol  
Value  
Unit  
V
DS  
60  
Vdc  
N−Channel  
Gate−Source Voltage  
− Continuous  
D
V
V
GSM  
±20  
±40  
Vdc  
Vpk  
GS  
− Non−repetitive (t 50 ms)  
p
Drain Current (Note)  
I
0.5  
Adc  
mW  
°C  
D
G
Total Device Dissipation @ T = 25°C  
P
350  
A
D
Operating and Storage Junction  
Temperature Range  
T , T  
55 to  
+150  
J
stg  
S
1. The Power Dissipation of the package may result in a lower continuous drain  
current.  
TO−92 (TO−226)  
CASE 29  
STYLE 30  
1
2
3
MARKING DIAGRAM  
& PIN ASSIGNMENT  
BS170  
YWW  
1
3
Drain  
Source  
2
Gate  
Y
WW  
= Year  
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
April, 2004 − Rev. 4  
BS170/D  

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