是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | CYLINDRICAL, O-PBCY-T3 | Reach Compliance Code: | compliant |
风险等级: | 0.58 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 0.5 A |
最大漏极电流 (ID): | 0.5 A | 最大漏源导通电阻: | 5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 10 pF |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.83 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BS170-D75Z | ONSEMI |
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单N沟道小信号MOSFET,60V,500mA,5Ω | |
BS170D81Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
BS170D89Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
BS170E6288 | INFINEON |
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Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
BS170F | DIODES |
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N-CHANNEL ENHANCEMENT MODE MOSFET | |
BS170FTA | DIODES |
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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
BS170FTA | ZETEX |
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Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Meta | |
BS170FTA | UMW |
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种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时 | |
BS170FTC | DIODES |
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Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Meta | |
BS170G | ONSEMI |
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Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET |