BS170-D75Z

更新时间： 2024-09-29 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		小信号场效应晶体管
页数	文件大小	规格书
4页	56K
描述
单N沟道小信号MOSFET，60V，500mA，5Ω

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中文翻译

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数据手册

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BS170-D75Z 数据手册

BS170

Preferred Device

Small Signal MOSFET

500 mA, 60 V

N−Channel TO−92 (TO−226)

Features

http://onsemi.com

• Pb−Free Package is Available*

500 mA, 60 V

R_DS(on)= 5 W

MAXIMUM RATINGS

Rating

Drain−Source Voltage

Symbol

Value

Unit

Vdc

N−Channel

Gate−Source Voltage

− Continuous

GSM

±20

±40

Vdc

Vpk

− Non−repetitive (t ≤ 50 ms)

Drain Current (Note)

0.5

Adc

°C

Total Device Dissipation @ T = 25°C

350

Operating and Storage Junction

Temperature Range

T , T

−55 to

+150

stg

1. The Power Dissipation of the package may result in a lower continuous drain

current.

TO−92 (TO−226)

CASE 29

STYLE 30

MARKING DIAGRAM

& PIN ASSIGNMENT

BS170

YWW

Drain

Source

Gate

= Year

= Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

*For additional information on our Pb−Free strategy

and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

April, 2004 − Rev. 4

BS170/D

12 3 4

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