Datasheet > BS170D10Z

BS170D10Z

更新时间： 2024-09-29 03:08:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
14页	1256K
描述
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN

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BS170D10Z 数据手册

March 2009

BS170 / MMBF170

N-Channel Enhancement Mode Field Effect Transistor

Features

General Description

These N-Channel enhancement mode field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. These products have been

designed to minimize on-state resistance while provide

rugged, reliable, and fast switching performance. They can

be used in most applications requiring up to 500mA DC.

These products are particularly suited for low voltage, low

current applications such as small servo motor control,

power MOSFET gate drivers, and other switching

applications.

■ High density cell design for low R_DS(ON)

■ Voltage controlled small signal switch.

■ Rugged and reliable.

■ High saturation current capability.

TO - 92

SOT - 23

Absolute Maximum Ratings T_a= 25°C unless otherwise noted

Symbol

Parameter

BS170

MMBF170

Units

V_DSS

Drain-Source Voltage

V_DGR

V_GSS

I_D

Drain-Gate Voltage (R_GS≤ 1MΩ)

Gate-Source Voltage

± 20

Drain Current - Continuous

- Pulsed

500

800

1200

T_J, T_STG

T_L

Operating and Storage Temperature Range

- 55 to 150

300

°C

Maximum Lead Temperature for Soldering

Purposes, 1/16" from Case for 10 Seconds

Thermal Characteristics T_a= 25°C unless otherwise noted

Symbol

Parameter

BS170

MMBF170

Units

P_D

Maximum Power Dissipation

Derate above 25°C

830

6.6

300

2.4

mW/°C

R_θJA

Thermal Resistance, Junction to Ambient

150

417

°C/W

BS170 / MMBF170 Rev. E1

www.fairchildsemi.com

12 3 4 5 6 7...14

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