Datasheet > BL59N30

BL59N30

更新时间： 2024-11-03 14:55:03

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	849K
描述
BL59N30, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BL59N30 数据手册

BL59N30

Power MOSFET

1．Description

BL59N30, the silicon N-channel Enhanced

MOSFETs, is obtained by advanced MOSFET

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. The transistor is suitable

device for SMPS, high speed switching and

general purpose applications.

KEY CHARACTERISTICS

Parameter

V_DS@Tj.max

I_D

Value

300

Unit

R_DS(ON).Typ

FEATURES

mΩ



Fast Switching

Low Crss

100% avalanche tested

Improved dv/dt capability

RoHS product

TO-247

TO-3PN

APPLICATIONS

High frequency switching mode power supply



ORDERING INFORMATION

Ordering Codes

BL59N30-W

BL59N30-F

Package

TO-3PN

TO-247

Product Code

BL59N30

Packing

Tube

BL59N30-A

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1)BL59N30:300V 59A

(2) W:TO-3PN F:TO-247

BL59N30

Rev 1.0

8/2019

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