Datasheet > BL5N65D

BL5N65D

更新时间： 2024-04-09 18:58:44

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	424K
描述
5A, 650V, 75W, N Channel,Power MOSFETs

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BL5N65D 数据手册

Product Specification

N-Channel Power Mosfet

FEATURES

BL5N65I / BL5N65D



Ultra low gate charge ( typical 15 nC )

Low reverse transfer Capacitance ( CRSS = typical 6.5 pF )

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

TO-251/252

Ordering Information

Part Number

Package

Shipping

Marking Code

BL5N65I

TO-251

80pcs / Tube

5N65I

BL5N65D

TO-252

80pcs / Tube or 2500pcs / Tape & Reel

5N65D

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

V_DSS

Drain-Source voltage

650

V_GSS

Gate -Source voltage

±30

I_D

Continuous Drain Current

5.0

I_DM

Pulsed Drain Current

Avalanche Energy

E_AS

E_AR

Single Pulsed

Repetitive

210

dv/dt

P_D

Peak Diode Recovery dv/dt

Power Dissipation

4.5

V/ns

R_θJA

T_J

Thermal resistance, Junction-to-Ambient

Junction Temperature

62.5

+150

℃/W

℃

T_STG

Operating and Storage Temperature

-55 to +150

℃

MTM0483A

www.gmesemi.com

12 3 4 5

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