Datasheet > BL5N50

BL5N50

更新时间： 2023-12-06 19:52:22

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
15页	1304K
描述
BL5N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BL5N50 数据手册

BL5N50

Power MOSFET

1．Description

BL5N50, the silicon N-channel Enhanced

MOSFETs, is obtained by advanced MOSFET

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. The transistor is suitable

device for SMPS, high speed switching and

general purpose applications.

KEY CHARACTERISTICS

Parameter

V_DS

I_D

Value

500

Unit

R_DS(ON).Typ

FEATURES

1.31

Ω

TO-220

TO-251

TO-220F



Fast Switching

Low Crss

100% avalanche tested

Improved dv/dt capability

RoHS product

APPLICATIONS

High frequency switching mode power supply

TO-252



ORDERING INFORMATION

Ordering Codes

BL5N50-P

BL5N50-A

BL5N50-U

BL5N50-D

Package

Product Code

5N50

Packing

Tube

TO-220

TO-220F

TO-251

TO-252

BL5N50-A

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1)BL5N50:500V 5A

(2) A:TO-220F P:TO-220

U:TO-251 D:TO-252

BL5N50

Rev 1.0

6/2019

www.belling.com.cn

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

1/ 15

12 3 4 5 6 7...15

下载PDF

与BL5N50相关器件

型号	品牌	描述	获取价格	数据表
BL5N60	BL Galaxy Electrical	5A, 600V, 100W, N Channel,Power MOSFETs	获取价格
BL5N60D	BL Galaxy Electrical	4.5A, 600V, 100W, N Channel,Power MOSFETs	获取价格
BL5N60F	BL Galaxy Electrical	5A, 600V, 100W, N Channel, Power MOSFETs	获取价格
BL5N60I	BL Galaxy Electrical	4.5A, 600V, 100W, N Channel,Power MOSFETs	获取价格
BL5N65	BL Galaxy Electrical	5A, 650V, 75W, N Channel,Power MOSFETs	获取价格
BL5N65D	BL Galaxy Electrical	5A, 650V, 75W, N Channel,Power MOSFETs	获取价格