Datasheet > BL5N135

BL5N135

更新时间： 2023-12-06 20:09:17

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
16页	1327K
描述
BL5N135, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BL5N135 数据手册

BL5N135

Power MOSFET

1．Description

BL5N135, the silicon N-channel Enhanced

MOSFETs, is obtained by advanced MOSFET

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. The transistor is suitable

device for SMPS, high speed switching and

general purpose applications.

KEY CHARACTERISTICS

Parameter

V_DS

I_D

Value

1350

Unit

R_DS(ON).Typ

FEATURES

Ω



Fast Switching

Low Crss

100% avalanche tested

Improved dv/dt capability

RoHS product

APPLICATIONS

High frequency switching mode power supply



ORDERING INFORMATION

Ordering Codes

BL5N135-P

BL5N135-A

BL5N135-W

BL5N135-K

BL5N135-F

Package

Product Code

5N135

Packing

Tube

TO-220

TO-220F

TO-3PN

TO-3PF

TO-247

BL5N135-A

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1) BL5N135:1350V 5A

(2) A:TO-220F P:TO-220

W:TO-3PN K:TO-3PF F:TO-247

BL5N135

Rev 1.0

3/2020

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