Datasheet > BL5N65F

BL5N65F

更新时间： 2024-10-01 17:00:51

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	325K
描述
5A, 650V, 36W, N Channel, Power MOSFETs

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BL5N65F 数据手册

Product specification

5A,650V N-Channel Power Mosfet

FEATURES

BL5N65F

R_DS(ON)=2.4Ω@ V_GS= 10V

Lead-free

Ultra low gate charge ( typical 15 nC )

Low reverse transfer Capacitance

( CRSS = typical 6.5 pF )

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

ITO-220AB

Ordering Information

Part Number

Package

Shipping

Marking Code

BL5N65F□

ITO-220AB

50/Tube

5N65F

□: none is for Lead Free package;

“G” is for Halogen Free package.

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_DSS

V_GSS

I_D

Parameter

Value

650

±30

Units

Drain-Source voltage

Gate -Source voltage

Continuous Drain Current

I_DM

Pulsed Drain Current

Avalanche Energy

E_AS

Single Pulsed

titi

210

V/ns

dv/dt

Peak Diode Recovery dv/dt

Power Dissipation

4.5

P_D

R_θJA

θJA

θJC

T_J

62.5

Thermal resistance,Junction-to-Ambient

Junction to Ambient

℃/W

℃

62.5

Junction to Case

3.47

Junction Temperature

+150

T_OPR, Tstg Operating and Storage Temperature

-55 to +150

℃

MTM5009A

www.gmesemi.com

12 3 4

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