Datasheet > BL5N60F

BL5N60F

更新时间： 2024-09-25 17:01:31

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	314K
描述
5A, 600V, 100W, N Channel, Power MOSFETs

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BL5N60F 数据手册

Product specification

4.5A,600V N-Channel Power Mosfet

FEATURES

BL5N60F

R_DS(ON)=2.5Ω@ V_GS= 10V

Lead-free

Ultra low gate charge ( typical 15 nC )

Low reverse transfer Capacitance

( CRSS = typical 6.5 pF )

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

ITO-220AB

Ordering Information

Part Number

Package

Shipping

Marking Code

BL5N60F□

ITO-220AB

50/Tube

5N60F

□: none is for Lead Free package;

“G” is for Halogen Free package.

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_DSS

V_GSS

I_AR

Parameter

Value

Units

Drain-Source voltage

Gate -Source voltage

600

±30

4.5

Avalanche Current（Note1）

Continuous Drain Current@TA=25℃

Pulsed Drain Current

I_D

I_DM

P_D

Power Dissipation

100

θJA

θJC

θCS

T_J

Junction to Ambient

62.5

1.25

0.5

℃/W

℃

Junction to Case

Case to sink

Junction Temperature

Operating and Storage Temperature

+150

-55 to +150

Tstg

Notes：

℃

Absolute maximum ratings those values beyond which the device could be permanently damaged

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

MTM5008A

www.gmesemi.com

12 3 4

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