Datasheet > BL5N60

BL5N60

更新时间： 2024-11-03 17:01:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	356K
描述
5A, 600V, 100W, N Channel,Power MOSFETs

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BL5N60 数据手册

Product Specification

N-Channel Enhancement Mode MOSFET

FEATURES

BL5N60



R_DS(ON)=2.5Ω@ V_GS= 10V

Ultra low gate charge ( typical 15 nC )

Low reverse transfer Capacitance ( C_RSS= typical 6.5 pF )

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

TO-220AB

Ordering Information

Part Number

Package

Shipping

Marking Code

BL5N60

TO-220AB

50pcs / Tube

5N60

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

V_DSS

Drain-Source voltage

Gate -Source voltage

600

±30

V_GSS

I_AR

Avalanche Current（Note1）

4.5

I_D

Continuous Drain Current@TA=25℃

I_DM

Pulsed Drain Current

P_D

R_θJA

R_θJC

R_θCS

T_J

Power Dissipation

100

62.5

℃/W

℃

Junction to Ambient

Junction to Case

1.25

Case to sink

0.5

Junction Temperature

Operating and Storage Temperature

+150

T_STG

-55 to +150

℃

MTM0317A

www.gmesemi.com

12 3 4

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