Datasheet > BL60N25

BL60N25

更新时间： 2023-12-06 20:04:04

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	1413K
描述
BL60N25, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BL60N25 数据手册

BL60N25

Power MOSFET

1．Description

BL60N25, the silicon N-channel Enhanced

MOSFETs, is obtained by advanced MOSFET

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. The transistor is suitable

device for SMPS, high speed switching and

general purpose applications.

KEY CHARACTERISTICS

Parameter

V_DS

Value

250

Unit

I_D

R_DS(ON).Typ

FEATURES

0.042

Ω



Fast Switching

Low Crss

100% avalanche tested

Improved dv/dt capability

RoHS product

TO-247

TO-3PN

APPLICATIONS

High frequency switching mode power supply



ORDERING INFORMATION

Ordering Codes

BL60N25-F

BL60N25-W

Package

TO-247

TO-3PN

Product Code

60N25

Packing

Tube

BL60N25-W

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1)BL60N25:250V 60A

(2) F:TO-247 W:TO-3PN

BL60N25

Rev 1.0

3/2019

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