BGA420E6327

更新时间： 2024-10-28 12:52:07

品牌	Logo	应用领域
英飞凌 - INFINEON		放大器
页数	文件大小	规格书
8页	553K
描述
Si-MMIC-Amplifier in SIEGET 25-Technologie

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BGA420E6327 数据手册

BGA420



in SIEGET 25-Technologie

Si-MMIC-Amplifier

• Cascadable 50 Ω-gain block

• Unconditionally stable

• Gain |S | = 13 dB at 1.8 GHz

= +13 dBm at 1.8 GHz

3out

(V = 3 V, I = typ. 6.7 mA)

• Noise figure NF = 2.2 dB at 1.8 GHz

• Reverse isolation > 28 dB and

V_D

return loss IN / OUT > 12 dB at 1.8 GHz

• Pb-free (RoHS compliant) package

OUT

Circuit Diagram

GND

EHA07385

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BGA420

Marking

BLs

Pin Configuration

2, GND 3, OUT 4, VD

Package

SOT343

1, IN

Maximum Ratings

Parameter

Device current

Device voltage

Total power dissipation

Symbol

Value

Unit

tot

T = 110 °C

150

dBm

°C

RF input power

RFin

Junction temperature

Ambient temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Junction - soldering point

K/W

≤ 410

thJS

For calculation of R

please refer to Application Note Thermal Resistance

thJA

2011-07-26

12 3 4 5 6 7 8

中文翻译

下载PDF

与BGA420E6327相关器件

型号	品牌	获取价格	描述	数据表
BGA420E6327XT	INFINEON	获取价格	Wide Band Low Power Amplifier, 100MHz Min, 1800MHz Max, GREEN, SOT-343, 4 PIN
BGA420-E6433	INFINEON	获取价格	RF/Microwave Amplifier, 1 Func, BIPolar
BGA420H6327	INFINEON	获取价格	RF/Microwave Amplifier, 1 Func, BIPolar
BGA425	INFINEON	获取价格	Si-MMIC-Amplifier in SIEGET 25-Technologie (M
BGA425E6327	INFINEON	获取价格	Narrow Band Low Power Amplifier, 100MHz Min, 1800MHz Max,
BGA427	INFINEON	获取价格	Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally sta
BGA427_07	INFINEON	获取价格	Si-MMIC-Amplifier in SIEGET 25-Technologie
BGA427E6327	INFINEON	获取价格	Narrow Band Medium Power Amplifier, 100MHz Min, 1800MHz Max, 1 Func, BIPolar,
BGA427H6327XTSA1	INFINEON	获取价格	Si-MMIC-Amplifier in SIEGET 25-Technologie
BGA428	INFINEON	获取价格	BGA428 High Gain, Low Noise Amplifier