Datasheet > BGA5M1BN6

BGA5M1BN6

更新时间： 2024-11-28 14:54:31

品牌	Logo	应用领域
英飞凌 - INFINEON		放大器 LTE
页数	文件大小	规格书
14页	525K
描述
BGA5M1BN6 是一款前端低噪声放大器，适用于 1805 MHz 至 2200 Mhz 频率范围内的 LTE 应用。在应用配置中，LNA 在 9.5mA 的电流消耗下提供 19.3 dB 增益和 0.65 dB 噪声系数。在旁路模式下，LNA 提供4.7 dB的插入损耗。

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BGA5M1BN6 数据手册

BGA5M1BN6

18dB High Gain Low Noise Amplifier for LTE Midband

Features

•

Operating frequencies: 1805 - 2200 MHz

Insertion power gain: 19.3 dB

Insertion Loss in bypass mode: 4.7 dB

Low noise figure: 0.65 dB

Low current consumption: 9.5 mA

Multi-state control: Bypass- and high gain-Mode

Ultra small TSNP-6-2 and TSNP-6-10 leadless package

RF output internally matched to 50 Ohm

Low external component count

0.7 x 1.1 mm²

Application

The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function

increases the overall system dynamic range and leads to more flexibility in the RF front-end.

In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to

the basestation the bypass mode can be activated reducing current consumption.

Product Validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Block diagram

VCC

ESD

GND

BGA5M1BN6_Blockdiagram.vsd

Data Sheet

www.infineon.com

Revision 2.0

2018-02-01

12 3 4 5 6 7...14

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