Datasheet > BGA5M1BN6E6327XTSA1

BGA5M1BN6E6327XTSA1

更新时间： 2024-10-28 20:58:59

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BGA5M1BN6E6327XTSA1 技术参数

BGA5M1BN6

18dB High Gain Low Noise Amplifier for LTE Midband

Features

•

Operating frequencies: 1805 - 2200 MHz

Insertion power gain: 19.3 dB

Insertion Loss in bypass mode: 4.7 dB

Low noise figure: 0.65 dB

Low current consumption: 9.5 mA

Multi-state control: Bypass- and high gain-Mode

Ultra small TSNP-6-10 leadless package

RF output internally matched to 50 Ohm

Low external component count

0.7 x 1.1 mm²

Application

The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function

increases the overall system dynamic range and leads to more flexibility in the RF front-end.

In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to

the basestation the bypass mode can be activated reducing current consumption.

Product Validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Block diagram

VCC

ESD

GND

BGA5M1BN6_Blockdiagram.vsd

Data Sheet

www.infineon.com

Revision 2.2

2018-03-15

12 3 4 5 6 7...12

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