Datasheet > BGA5L1BN6

BGA5L1BN6

更新时间： 2024-10-29 14:52:51

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

BGA5L1BN6 数据手册

BGA5L1BN6

18dB High Gain Low Noise Amplifier for LTE Lowband

Features

•

Operating frequencies: 600 - 1000 MHz

Insertion power gain: 18.5 dB

Insertion Loss in bypass mode: 2.7 dB

Low noise figure: 0.7 dB

Low current consumption: 8.2 mA

Multi-state control: Bypass- and high gain-Mode

Ultra small TSNP-6-2 and TSNP-6-10 leadless package

RF output internally matched to 50 Ohm

Low external component count

0.7 x 1.1 mm²

Application

The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function

increases the overall system dynamic range and leads to more flexibility in the RF front-end.

In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to

the basestation the bypass mode can be activated reducing current consumption.

Product Validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Block diagram

VCC

ESD

GND

BGA5L1BN6_Blockdiagram.vsd

Data Sheet

www.infineon.com

Revision 2.0

2018-03-15

12 3 4 5 6 7...14

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
BGA5M1BN6	INFINEON	获取价格	BGA5M1BN6 是一款前端低噪声放大器，适用于 1805 MHz 至 2200 Mhz
BGA5M1BN6E6327XTSA1	INFINEON	获取价格	Telecom Circuit,
BGA6101	NXP	获取价格	RF Manual 16th edition
BGA6102	NXP	获取价格	RF Manual 16th edition
BGA6104	NXP	获取价格	RF Manual 16th edition
BGA612	INFINEON	获取价格	Silicon Germanium Broadband MMIC Amplifier
BGA612_08	INFINEON	获取价格	Silicon Germanium Broadband MMIC Amplifier
BGA612H6327XTSA1	INFINEON	获取价格	Wide Band Low Power Amplifier, 0MHz Min, 2800MHz Max, HALOGEN FREE AND ROHS COMPLIANT, SOT
BGA6130	NXP	获取价格	400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
BGA6130,118	NXP	获取价格	BGA6130 - 400 MHz to 2700 MHz 1 W high efficiency silicon amplifier SON 8-Pin