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BGA420E6327XT PDF预览

BGA420E6327XT

更新时间: 2024-10-28 13:05:55
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器
页数 文件大小 规格书
8页 553K
描述
Wide Band Low Power Amplifier, 100MHz Min, 1800MHz Max, GREEN, SOT-343, 4 PIN

BGA420E6327XT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.65特性阻抗:50 Ω
构造:COMPONENT增益:11 dB
最大输入功率 (CW):JESD-609代码:e3
最大工作频率:1800 MHz最小工作频率:100 MHz
最高工作温度:150 °C最低工作温度:-65 °C
射频/微波设备类型:WIDE BAND LOW POWER端子面层:Matte Tin (Sn)
Base Number Matches:1

BGA420E6327XT 数据手册

 浏览型号BGA420E6327XT的Datasheet PDF文件第2页浏览型号BGA420E6327XT的Datasheet PDF文件第3页浏览型号BGA420E6327XT的Datasheet PDF文件第4页浏览型号BGA420E6327XT的Datasheet PDF文件第5页浏览型号BGA420E6327XT的Datasheet PDF文件第6页浏览型号BGA420E6327XT的Datasheet PDF文件第7页 
BGA420  
in SIEGET 25-Technologie  
Si-MMIC-Amplifier  
Cascadable 50 -gain block  
3
Unconditionally stable  
2
1
4
2
Gain |S | = 13 dB at 1.8 GHz  
21  
IP  
= +13 dBm at 1.8 GHz  
3out  
(V = 3 V, I = typ. 6.7 mA)  
D
D
Noise figure NF = 2.2 dB at 1.8 GHz  
Reverse isolation > 28 dB and  
VD  
4
return loss IN / OUT > 12 dB at 1.8 GHz  
Pb-free (RoHS compliant) package  
3
OUT  
Circuit Diagram  
1
IN  
2
GND  
EHA07385  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
BGA420  
Marking  
BLs  
Pin Configuration  
2, GND 3, OUT 4, VD  
Package  
SOT343  
1, IN  
Maximum Ratings  
Parameter  
Device current  
Device voltage  
Total power dissipation  
Symbol  
I
D
Value  
15  
6
90  
Unit  
mA  
V
V
P
D
mW  
tot  
T = 110 °C  
S
0
150  
dBm  
°C  
RF input power  
P
RFin  
Junction temperature  
Ambient temperature  
Storage temperature  
T
j
T
T
-65 ... 150  
-65 ... 150  
A
stg  
Thermal Resistance  
Junction - soldering point  
1)  
K/W  
R
410  
thJS  
1
For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
2011-07-26  
1

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