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BGA420H6327 PDF预览

BGA420H6327

更新时间: 2024-11-25 03:04:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 164K
描述
RF/Microwave Amplifier, 1 Func, BIPolar

BGA420H6327 数据手册

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BGA420  
in SIEGET 25-Technologie  
Si-MMIC-Amplifier  
Cascadable 50 -gain block  
Unconditionally stable  
3
2
1
4
2
Gain |S | = 13 dB at 1.8 GHz  
21  
IP  
= +13 dBm at 1.8 GHz  
3out  
(V = 3 V, I = typ. 6.7 mA)  
D
D
Noise figure NF = 2.3 dB at 1.8 GHz  
Reverse isolation > 28 dB and  
VD  
4
return loss IN / OUT > 12 dB at 1.8 GHz  
Pb-free (RoHS compliant) package  
3
OUT  
1)  
Circuit Diagram  
1
IN  
2
GND  
EHA07385  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
BGA420  
Marking  
BLs  
Pin Configuration  
2, GND 3, OUT 4, VD  
Package  
SOT343  
1, IN  
Maximum Ratings  
Parameter  
Device current  
Device voltage  
Total power dissipation  
Symbol  
I
D
Value  
15  
6
90  
Unit  
mA  
V
V
P
D
mW  
tot  
T = 110 °C  
S
0
150  
dBm  
°C  
RF input power  
P
RFin  
Junction temperature  
Ambient temperature  
Storage temperature  
T
j
T
-65 ... 150  
-65 ... 150  
A
T
stg  
Thermal Resistance  
Junction - soldering point  
2)  
K/W  
R
410  
thJS  
1Pb-containing package may be available upon special request  
2For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
2007-07-12  
1

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