Datasheet > BGA420H6327

BGA420H6327

更新时间： 2024-10-29 03:04:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	164K
描述
RF/Microwave Amplifier, 1 Func, BIPolar

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中文翻译

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数据手册

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BGA420H6327 数据手册

BGA420



in SIEGET 25-Technologie

Si-MMIC-Amplifier

• Cascadable 50 Ω-gain block

• Unconditionally stable

• Gain |S | = 13 dB at 1.8 GHz

= +13 dBm at 1.8 GHz

3out

(V = 3 V, I = typ. 6.7 mA)

• Noise figure NF = 2.3 dB at 1.8 GHz

• Reverse isolation > 28 dB and

V_D

return loss IN / OUT > 12 dB at 1.8 GHz

• Pb-free (RoHS compliant) package

OUT

Circuit Diagram

GND

EHA07385

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BGA420

Marking

BLs

Pin Configuration

2, GND 3, OUT 4, VD

Package

SOT343

1, IN

Maximum Ratings

Parameter

Device current

Device voltage

Total power dissipation

Symbol

Value

Unit

tot

T = 110 °C

150

dBm

°C

RF input power

RFin

Junction temperature

Ambient temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Junction - soldering point

K/W

≤ 410

thJS

¹Pb-containing package may be available upon special request

²For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-07-12

12 3 4 5 6 7 8

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