BGA430

更新时间： 2024-10-27 22:27:39

品牌	Logo	应用领域
英飞凌 - INFINEON		射频和微波射频放大器微波放大器电视
页数	文件大小	规格书
24页	724K
描述
A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 & BGB540 Silicon MMICs

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BGA430 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	TSSOP6,.08	Reach Compliance Code：	unknown
风险等级：	5.81	Is Samacsys：	N
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	28 dB	最大输入功率 (CW)：	10 dBm
安装特点：	SURFACE MOUNT	功能数量：	1
端子数量：	6	最大工作频率：	2150 MHz
最小工作频率：	900 MHz	最高工作温度：	150 °C
最低工作温度：	-65 °C	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	TSSOP6,.08	电源：	5 V
射频/微波设备类型：	WIDE BAND LOW POWER	子类别：	RF/Microwave Amplifiers
表面贴装：	YES	技术：	BIPOLAR
Base Number Matches：	1

BGA430 数据手册

Applications Note No. 074

Silicon Discretes

A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite

Television Applications using the BGA430 & BGB540 Silicon MMICs

• Gain = 32 – 37 dB from 950 – 2150 MHz (positive gain slope)

• Low Power Consumption: 40mA at +5.0 Volts

• Exceptionally low Noise Figure: less than 3 dB

• Low Cost, Low Parts Count

• High Reverse Isolation

• Output Compression point: +1 dBm minimum

(May be increased with higher DC bias level)

• Suitable for European, Asian & North American DBS

LNB I.F. Amplifier Chains for 950 – 1450 and 950 – 2150 MHz

1. Overview

describes using the BGA430 MMIC as a stand-

Infineon’s BGA430 Broad Band High Gain

alone DBS I.F. Amplifier block, and covers

Low Noise Amplifier and BGB540 Active

design issues unique to BGA430. Section 6

Biased Transistor are shown in an

addresses the question “why might one want a

Intermediate-Frequency

(“I.F.”)

amplifier

positive gain slope I.F. Amplifier” and Section 7

gives measurement results on the complete

gain-sloped amplifier using both BGA430 &

BGB540.

application targeted for the I.F. chains of

European, Asian and North American Direct-

Broadcast Satellite (DBS) Low Noise Block

Amplifier / Downconverters (LNBs).

Table 1.

complete

Amplifier.

Typical performance for the

BGA430+BGB540 LNB I.F.

A summary of key performance parameters for

the complete LNB I.F. Amplifier is given in Table

1 to the right.

The reader is referred to

Appendix A on page 21 for complete electrical

data including minimum, maximum, mean value,

and standard deviation for the lot of Printed

Circuit Boards (PCBs) tested. Appendix B on

page 22 gives information on performance over

the –40 to +85 °C temperature range.

Conditions: Temperature=25°C, V=5.0 Volts, n=25 units,

Z_S=Z_L=50Ω, network analyzer source power = -40 dBm

Parameter

Frequency, MHz

950

1450

27.3

37.2

>50

2150

Input Return Loss, dB

Gain, dB

26.0

33.0

>50

12.0

37.2

>50

Reverse Isolation, dB

Output Return Loss, dB

Noise Figure, dB

Output P_1dB, dBm

Input IP₃, dBm

Section 2 of this applications note provides a

brief description of the BGA430 and BGB540

MMICs. Section 3 gives some general Direct

Broadcast Satellite system information, and is

included to provide a general background.

Section 4 provides details on the PC Board

used, including photos, a Bill of Material (BOM)

and a PCB cross-sectional diagram. Section 5

13.7

2.4

13.4

2.4

13.1

2.6

+1.7

-20.8

+4.9

-22.5

+7.9

-18.9

Please note that the reference planes for all

measurement data shown in Table 1 are at the

PC board’s SMA RF connectors; e.g. no PCB

loss is extracted from the numbers given.

AN 074 Rev E

1 / 24

19-November-2002

12 3 4 5 6 7...24

中文翻译

下载PDF

与BGA430相关器件

型号	品牌	获取价格	描述	数据表
BGA461	INFINEON	获取价格	Silicon Germanium GPS Low Noise Amplifier
BGA49	ETC	获取价格	bga49测试座 IC测试座测试座价格测试座厂家
BG-A511RD	ETC	获取价格	DUAL DIGIT LED DISPLAYS
BG-A512RD	ETC	获取价格	DUAL DIGIT LED DISPLAYS
BG-A513RD	ETC	获取价格	DUAL DIGIT LED DISPLAYS
BG-A514RE	ETC	获取价格	DUAL DIGIT LED DISPLAYS
BG-A515RD	ETC	获取价格	DUAL DIGIT LED DISPLAYS
BG-A515RE	ETC	获取价格	DUAL DIGIT LED DISPLAYS
BG-A516RD	ETC	获取价格	DUAL DIGIT LED DISPLAYS
BG-A51DRD	ETC	获取价格	DUAL DIGIT LED DISPLAYS

与BGA430相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

13
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

13
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

40
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

47

产品中心

服务支持

精选活动

关于我们

帮助中心

BGA430

BGA430 技术参数

BGA430 数据手册

与BGA430相关器件

与BGA430相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BGA430

BGA430 技术参数

BGA430 数据手册

与BGA430相关器件

与BGA430相关文章

您还可以找

您在本页遇到什么问题？