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BFU520XR PDF预览

BFU520XR

更新时间: 2024-11-13 21:21:27
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
22页 308K
描述
RF SMALL SIGNAL TRANSISTOR

BFU520XR 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.63Base Number Matches:1

BFU520XR 数据手册

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BFU520XR  
NPN wideband silicon RF transistor  
Rev. 1 — 5 March 2014  
Product data sheet  
1. Product profile  
1.1 General description  
NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin  
dual-emitter SOT143R package.  
The BFU520XR is part of the BFU5 family of transistors, suitable for small signal to  
medium power applications up to 2 GHz.  
1.2 Features and benefits  
Low noise, high breakdown RF transistor  
AEC-Q101 qualified  
Minimum noise figure (NFmin) = 0.65 dB at 900 MHz  
Maximum stable gain 20 dB at 900 MHz  
11 GHz fT silicon technology  
1.3 Applications  
Applications requiring high supply voltages and high breakdown voltages  
Broadband amplifiers up to 2 GHz  
Low noise amplifiers for ISM applications  
ISM band oscillators  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tamb = 25 C unless otherwise specified  
Symbol Parameter  
Conditions  
open emitter  
open base  
Min Typ Max Unit  
VCB  
VCE  
collector-base voltage  
collector-emitter voltage  
-
-
24  
12  
24  
2
V
-
-
V
shorted base  
open collector  
-
-
V
VEB  
IC  
emitter-base voltage  
collector current  
-
-
V
-
5
30  
mA  
[1]  
Ptot  
hFE  
CCBS  
fT  
total power dissipation  
DC current gain  
Tsp 87 C  
-
-
450 mW  
200  
IC = 5 mA; VCE = 8 V  
60  
-
95  
0.28  
10.5  
collector-base capacitance VCB = 8 V; f = 1 MHz  
transition frequency IC = 10 mA; VCE = 8 V; f = 900 MHz  
-
-
pF  
-
GHz  

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