Datasheet > BFU520Y

BFU520Y

更新时间： 2024-04-09 19:01:39

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	339K
描述
12V,0.03A,General Purpose NPN Bipolar Transistor

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中文翻译

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数据手册

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BFU520Y 数据手册

Dual NPN Wideband Silicon RF Transistor

BFU520Y

Features



10GHz f_Tsilicon technology

Low noise, high breakdown RF transistor

Mechanical Data



Case: SOT-363

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-363

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BFU520Y

SOT-363

3000 pcs / Tape & Reel

U520G

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Collector-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Thermal Characteristics

Parameter

Power Dissipation (Collector)

Symbol

P_D

Value

450

Unit

C/W

°C

Thermal Resistance (Junction-to-Ambient)

Operating Junction Temperature

Storage Temperature Range

R_θJL

T_J

140

-55 ~ +150

T_STG

°C

STM0435A: August 2023 [1.0]

www.gmesemi.com

12 3 4

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