Datasheet > BFU660F

BFU660F

更新时间： 2022-10-17 01:32:26

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
12页	123K
描述
NPN wideband silicon RF transistor

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BFU660F 数据手册

BFU660F

NPN wideband silicon RF transistor

Rev. 1 — 11 January 2011

Product data sheet

1. Product profile

1.1 General description

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin

dual-emitter SOT343F package.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

1.2 Features and benefits

Low noise high linearity RF transistor

High output third-order intercept point 27 dBm at 1.8 GHz

40 GHz f_Tsilicon technology

1.3 Applications

Analog/digital cordless applications

X-band high output buffer amplifier

ZigBee

SDARS second stage LNA

LTE, cellular, UMTS

12 3 4 5 6 7...12

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