Datasheet > BFU660F

BFU660F

更新时间： 2024-11-13 08:52:43

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
12页	123K
描述
NPN wideband silicon RF transistor

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

BFU660F 数据手册

BFU660F

NPN wideband silicon RF transistor

Rev. 1 — 11 January 2011

Product data sheet

1. Product profile

1.1 General description

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin

dual-emitter SOT343F package.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

1.2 Features and benefits

Low noise high linearity RF transistor

High output third-order intercept point 27 dBm at 1.8 GHz

40 GHz f_Tsilicon technology

1.3 Applications

Analog/digital cordless applications

X-band high output buffer amplifier

ZigBee

SDARS second stage LNA

LTE, cellular, UMTS

12 3 4 5 6 7...12

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
BFU660FWB	NXP	获取价格	RF Manual 16th edition
BFU668F	NXP	获取价格	RF SMALL SIGNAL TRANSISTOR
BFU668F,115	NXP	获取价格	BFU668F - NPN wideband silicon RF transistor DFP 4-Pin
BFU690F	NXP	获取价格	NPN wideband silicon RF transistor
BFU690F,115	NXP	获取价格	BFU690F - NPN wideband silicon RF transistor DFP 4-Pin
BFU710F	NXP	获取价格	NPN wideband silicon germanium RF transistor
BFU725F	NXP	获取价格	NPN wideband silicon germanium RF transistor
BFU725F,150	NXP	获取价格	RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, C Band, Silicon Germanium, NPN
BFU725F,240	NXP	获取价格	RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, C Band, Silicon Germanium, NPN
BFU725F/N1	NXP	获取价格	NPN wideband silicon germanium RF transistor