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BFU550W PDF预览

BFU550W

更新时间: 2024-09-26 15:19:47
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
22页 296K
描述
NPN Wideband Silicon RF Transistor

BFU550W 数据手册

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BFU550W  
7
2
6
NPN wideband silicon RF transistor  
Rev. 1 — 13 January 2014  
Product data sheet  
1. Product profile  
1.1 General description  
NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323  
package.  
The BFU550W is part of the BFU5 family of transistors, suitable for small signal to  
medium power applications up to 2 GHz.  
1.2 Features and benefits  
Low noise, high breakdown RF transistor  
AEC-Q101 qualified  
Minimum noise figure (NFmin) = 0.6 dB at 900 MHz  
Maximum stable gain 18 dB at 900 MHz  
11 GHz fT silicon technology  
1.3 Applications  
Applications requiring high supply voltages and high breakdown voltages  
Broadband amplifiers up to 2 GHz  
Low noise amplifiers for ISM applications  
ISM band oscillators  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tamb = 25 C unless otherwise specified  
Symbol Parameter  
Conditions  
open emitter  
open base  
Min Typ Max Unit  
VCB  
VCE  
collector-base voltage  
collector-emitter voltage  
-
-
24  
12  
24  
2
V
-
-
V
shorted base  
open collector  
-
-
V
VEB  
IC  
emitter-base voltage  
collector current  
-
-
V
-
15  
-
50  
mA  
[1]  
Ptot  
hFE  
Cc  
total power dissipation  
DC current gain  
Tsp 87 C  
-
450 mW  
200  
IC = 15 mA; VCE = 8 V  
VCB = 8 V; f = 1 MHz  
IC = 25 mA; VCE = 8 V; f = 900 MHz  
60  
-
95  
0.74  
11  
collector capacitance  
transition frequency  
-
-
pF  
fT  
-
GHz  

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