BFU550X
B
3
4
1
T
O
S
NPN wideband silicon RF transistor
Rev. 2 — 12 April 2019
Product data sheet
1 Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-
emitter SOT143B package.
The BFU550X is part of the BFU5 family of transistors, suitable for small signal to
medium power applications up to 2 GHz.
1.2 Features and benefits
• Low noise, high breakdown RF transistor
• AEC-Q101 qualified
• Minimum noise figure (NFmin) = 0.75 dB at 900 MHz
• Maximum stable gain 21.5 dB at 900 MHz
• 11 GHz fT silicon technology
1.3 Applications
• Applications requiring high supply voltages and high breakdown voltages
• Broadband amplifiers up to 2 GHz
• Low noise amplifiers for ISM applications
• ISM band oscillators
1.4 Quick reference data
Table 1.ꢀQuick reference data
Tamb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
open emitter
open base
Min Typ Max Unit
VCB
VCE
collector-base voltage
collector-emitter voltage
-
-
24
12
24
2
V
-
-
V
shorted base
open collector
-
-
V
VEB
IC
emitter-base voltage
collector current
-
-
V
-
15
-
50
mA
[1]
Ptot
hFE
Cc
total power dissipation
DC current gain
Tsp ≤ 87 °C
-
450 mW
200
IC = 15 mA; VCE = 8 V
VCB = 8 V; f = 1 MHz
IC = 25 mA; VCE = 8 V; f = 900 MHz
60
-
95
0.72
11
collector capacitance
transition frequency
-
-
pF
fT
-
GHz