Datasheet > BFU610F,115

BFU610F,115

更新时间： 2024-02-24 19:59:00

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	113K
描述
BFU610F - NPN wideband silicon RF transistor DFP 4-Pin

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BFU610F,115 技术参数

BFU610F

NPN wideband silicon RF transistor

Rev. 2 — 11 January 2011

Product data sheet

1. Product profile

1.1 General description

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin

dual-emitter SOT343F package.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

1.2 Features and benefits

Low noise high gain microwave transistor

Noise figure (NF) = 1.7 dB at 5.8 GHz

High associated gain 13.5 dB at 5.8 GHz

40 GHz f_Tsilicon technology

1.3 Applications

Low current battery equipped applications

Low noise amplifiers for microwave communications systems

Analog/digital cordless applications

RKE

AMR

GPS

ZigBee

LTE, cellular, UMTS

FM radio

Mobile TV

Bluetooth

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