Datasheet > BFU590Q

BFU590Q

更新时间： 2024-06-27 12:13:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
9页	1223K
描述
NPN Transistor

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数据手册

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BFU590Q 数据手册

SMD Type

Transistors

NPN Wideband Silicon RF Transistor

BFU590Q

■ Features

1.70 0.1

● Medium power, high linearity, high breakdown voltage RF transistor

● Maximum stable gain 11 dB at 900 MHz

● P^L(1dB)22 dBm at 900 MHz

● 8GHz fT silicon technology

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings (Ta = 25℃)

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

CBO

CEO

Collector - Emitter Voltage open base

Collector - Emitter Voltage shorted base

Emitter - Base Voltage

CES

EBO

Collector Current - Continuous

300

Total power dissipation TS

≤ 85 °C ^*1

tot

Electrostatic discharge voltage

ESD

Human Body Model (HBM) According to JEDEC standard 22-A114E

Charged Device Model (CDM) According to JEDEC standard 22-C101B

±250

±2

Thermal resistance from junction to solder point ^*2

Junction Temperature

th(j-sp)

℃/W

150

℃

Storage Temperature Range

stg

-65 to 150

*1: T^spis the temperature at the solder point of the collector lead.

*2: Tsp is the temperature at the solder point of the collector lead.

sp has the following relation to the ambient temperature Tamb:

sp=Tamb+P×Rth(sp-a)

With P being the power dissipation and R^th(sp-a)being the thermal resistance between the solder point and

ambient. Rth(sp-a) is determined by the heat transfer properties in the application.

The heat transfer properties are set by the application board materials, the board layout and the

environment e.g. housing.

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