Datasheet > BFU725F_11

BFU725F_11

更新时间： 2022-05-13 04:21:36

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
12页	148K
描述
NPN wideband silicon germanium RF transistor

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BFU725F_11 数据手册

BFU725F/N1

NPN wideband silicon germanium RF transistor

Rev. 2 — 3 November 2011

Product data sheet

1. Product profile

1.1 General description

NPN silicon germanium microwave transistor for high speed, low noise applications in a

plastic, 4-pin dual-emitter SOT343F package.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

1.2 Features and benefits

 Low noise high gain microwave transistor

 Noise figure (NF) = 0.7 dB at 5.8 GHz

 High maximum stable gain 27 dB at 1.8 GHz

 110 GHz f_Tsilicon germanium technology

1.3 Applications

 2nd LNA stage and mixer stage in DBS LNB’s

 Satellite radio

 Low noise amplifiers for microwave communications systems

 WLAN and CDMA applications

 Analog/digital cordless applications

 Ka band oscillators (DRO’s)

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

open emitter

Min Typ

Max

Unit

V_CBO

V_CEO

V_EBO

I_C

collector-base voltage

collector-emitter voltage open base

2.8

1.0

emitter-base voltage

collector current

open collector

[1]

P_tot

total power dissipation

DC current gain

T_sp 90 C

136

400

h_FE

I_C= 10 mA; V_CE= 2 V;

160 280

T_j= 25 C

12 3 4 5 6 7...12

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