Datasheet > BFU790F

BFU790F

更新时间： 2024-01-15 14:29:27

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
12页	129K
描述
NPN wideband silicon germanium RF transistor

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BFU790F 技术参数

BFU790F

NPN wideband silicon germanium RF transistor

Rev. 1 — 22 April 2011

Product data sheet

1. Product profile

1.1 General description

NPN silicon germanium microwave transistor for high speed, low noise applications in a

plastic, 4-pin dual-emitter SOT343F package.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

1.2 Features and benefits

Low noise high linearity microwave transistor

110 GHz f_Tsilicon germanium technology

High maximum output power at 1 dB compression 20 dBm at 1.8 GHz

1.3 Applications

High linearity applications

Medium output power applications

Wi-Fi / WLAN / WiMAX

ZigBee

LTE, cellular, UMTS

12 3 4 5 6 7...12

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