Datasheet > BFU910F

BFU910F

更新时间： 2024-04-09 19:02:02

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
11页	139K
描述
NPN Wideband Silicon Germanium RF Transistor

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BFU910F 数据手册

BFU910F

NPN wideband silicon germanium RF transistor

Rev. 2 — 16 January 2015

Product data sheet

1. Product profile

1.1 General description

NPN silicon germanium RF transistor for high speed, low noise applications in a plastic,

4-pin dual-emitter SOT343F package.

The BFU910F is suitable for small signal applications up to 20 GHz.

1.2 Features and benefits

 Low noise high gain microwave transistor

 Minimum noise figure (NF_min) = 0.65 dB at 12 GHz

 Maximum stable gain 14.2 dB at 12 GHz

 90 GHz f_TSiGe technology

1.3 Applications

 K_uband DBS Low-Noise blocks

1.4 Quick reference data

Table 1.

Quick reference data

T_amb= 25 C unless otherwise specified

Symbol Parameter

Conditions

Min Typ Max Unit

V_CE

I_C

collector-emitter voltage

collector current

R_BE 1 M

2.0

3.0

[1]

P_tot

h_FE

C_CBS

f_T

total power dissipation

DC current gain

T_sp 90 C

300 mW

I_C= 6 mA; V_CE= 2 V

1900 -

collector-base capacitance V_CB= 2 V; f = 1 MHz

transition frequency

maximum stable gain

I_C= 6 mA; V_CE= 2 V

GHz

MSG

I_C= 6 mA; V_CE= 2 V;

f = 12 GHz

14.2

NF_min

G_ass

minimum noise figure

associated gain

I_C= 6 mA; V_CE= 2 V;

f = 12 GHz; _S= _opt

0.65

13.0

I_C= 6 mA; V_CE= 2 V;

f = 12 GHz; _S= _opt

P_L(1dB)

output power at 1 dB

gain compression

I_C= 10 mA; V_CE= 2 V;

f = 12 GHz; Z_S= Z_L= 50 

dBm

[1] T_spis the temperature at the solder point of the emitter lead.

12 3 4 5 6 7...11

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