Datasheet > BFU668F,115

BFU668F,115

更新时间： 2024-01-08 21:38:32

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	605K
描述
BFU668F - NPN wideband silicon RF transistor DFP 4-Pin

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BFU668F,115 数据手册

BFU668F

NPN wideband silicon RF transistor

Rev. 3 — 24 January 2012

Product data sheet

1. Product profile

1.1 General description

NPN silicon microwave transistor in a plastic, 4-pin dual-emitter SOT343F package

offering an innovative Ku-band DRO solution.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

1.2 Features and benefits

 DROs with good output power and low phase noise at very low current consumption: 5

dBm and 55 dBc/Hz/1 kHz at 12 mA

 Low-noise, high gain for low cost LNA solutions

 40 GHz f_Tsilicon technology

1.3 Applications

 Ku-band DROs in Ku-band LNBs

 C-band, low current LNAs

12 3 4 5 6 7...14

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