Datasheet > BFU630F

BFU630F

更新时间： 2024-02-26 00:22:42

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
12页	307K
描述
NPN wideband silicon RF transistor

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BFU630F 技术参数

BFU630F

NPN wideband silicon RF transistor

Rev. 1 — 15 December 2010

Product data sheet

1. Product profile

1.1 General description

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin

dual-emitter SOT343F package.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

1.2 Features and benefits

 Low noise high gain microwave transistor

 Noise figure (NF) = 0.85 dB at 2.4 GHz

 High maximum stable gain 26 dB at 1.8 GHz

 40 GHz f_Tsilicon technology

1.3 Applications

 Low noise amplifiers for microwave communications systems

 WLAN and CDMA applications

 Analog/digital cordless applications

 Ku band oscillators DRO’s

 LNB

 RKE

 AMR

 GPS

 ZigBee

 LTE, cellular, UMTS

 FM radio

 Mobile TV

 Bluetooth

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