Datasheet > BFU725F,240

BFU725F,240

更新时间： 2024-02-26 07:49:30

品牌	Logo	应用领域
恩智浦 - NXP		放大器光电二极管晶体管
页数	文件大小	规格书
13页	516K
描述
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, C Band, Silicon Germanium, NPN

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BFU725F,240 技术参数

BFU725F

NPN wideband silicon germanium RF transistor

Rev. 02 — 23 June 2010

Product data sheet

1. Product profile

1.1 General description

NPN silicon germanium microwave transistor for high speed, low noise applications in a

plastic, 4-pin dual-emitter SOT343F package.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

1.2 Features

Low noise high gain microwave transistor

Noise figure (NF) = 0.7 dB at 5.8 GHz

High maximum stable gain 27 dB at 1.8 GHz

110 GHz f_Tsilicon germanium technology

1.3 Applications

2nd LNA stage and mixer stage in DBS LNB’s

Satellite radio

Low noise amplifiers for microwave communications systems

WLAN and CDMA applications

Analog/digital cordless applications

Ka band oscillators DRO’s

12 3 4 5 6 7...13

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