BFR65

更新时间： 2024-02-11 19:14:53

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	25K
描述
NPN SILICON RF POWER TRANSISTOR

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数据手册

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BFR65 数据手册

BFR65

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI BRF65 is Designed for

20 V Large-Signal RF Amplifier

Applications.

PACKAGE STYLE SOT- 48

MAXIMUM RATINGS

400 mA

1.0 A ^(PEAK)f = ≥ 1.0 MHz

I_C

25 V

40 V

V_CE

V_CB

5.0 W @ T_mb= 125 C

P_DISS

f = ≥ 1.0 MHz

-65 ^OC to +200 ^OC

15 ^OC/W

T_J

T_STG

θ_JC

ALL DIMENSIONS IN MM

1 = COLLECTOR

2 & 4 = EMITTER

3 = BASE

CHARACTERISTICS ^T_C^{= 25}^O

SYMBOL

BV_CEO

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 5.0 mA

I_C= 1.0 mA

I_E= 1.0 mA

V_CB= 20 V

V_CE= 20 V

3.5

BV_CER

BV_CBO

BV_EBO

I_CBO

R_BE= 10 Ω

100

µA

I_C= 200 mA

I_C= 400 mA

h_FE

---

V_CE(SAT

)

I_C= 200 mA

V_CB= 20 V

I_B= 20 mA

0.75

C_ob

f = 1.0 MHz

V_CE= 20 V

I_C= 200 mA

I_C= 400 mA

f = 500 MHz

1.2

1.0

f_t

GHz

V_CE= 20 V

I_C= 200 mA

f = 200 MHz

f = 800 MHz

G_P

P_o

4.5

V_CE= 20 V

I_C= 200 mA

f = 200 MHz

450

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

中文翻译

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