生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.78 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 10 V |
配置: | SINGLE | 最高频带: | L BAND |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最小功率增益 (Gp): | 11 dB |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 7500 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFG197TRL13 | NXP |
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TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
BFG197TRL13 | YAGEO |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
BFG197W | NXP |
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TRANSISTOR C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
BFG197W/X | ETC |
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TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 100MA I(C) | SOT-343 | |
BFG197W/XR | NXP |
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TRANSISTOR C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
BFG197W/XR-T | NXP |
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TRANSISTOR C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
BFG197W/X-T | NXP |
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TRANSISTOR C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
BFG197W-T | NXP |
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TRANSISTOR C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
BFG198 | NXP |
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NPN 8 GHz wideband transistor | |
BFG198 | YAGEO |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |