生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.84 |
其他特性: | LOW NOISE, HIGH RELIABILITY | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 10 V |
配置: | SINGLE | 最高频带: | C BAND |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 7500 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFG198 | NXP |
获取价格 |
NPN 8 GHz wideband transistor | |
BFG198 | YAGEO |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
BFG198 | UTC |
获取价格 |
NPN | |
BFG198_15 | JMNIC |
获取价格 |
NPN 8 GHz wideband transistor | |
BFG198_2015 | JMNIC |
获取价格 |
NPN 8 GHz wideband transistor | |
BFG198T/R | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 100MA I(C) | SOT-223 | |
BFG198TRL | YAGEO |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
BFG198TRL13 | NXP |
获取价格 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR | |
BFG19S | INFINEON |
获取价格 |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna) | |
BFG19SE6327 | INFINEON |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |