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BF771

更新时间: 2024-11-10 22:27:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体放大器小信号双极晶体管射频小信号双极晶体管录像机电视光电二极管
页数 文件大小 规格书
3页 23K
描述
NPN Silicon RF Transistor (For modulators and amplifiers in TV and VCR tuners)

BF771 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.11
其他特性:LOW NOISE最大集电极电流 (IC):0.08 A
基于收集器的最大容量:1 pF集电极-发射极最大电压:12 V
配置:SINGLE最高频带:L BAND
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):8000 MHzBase Number Matches:1

BF771 数据手册

 浏览型号BF771的Datasheet PDF文件第2页浏览型号BF771的Datasheet PDF文件第3页 
BF 771  
NPN Silicon RF Transistor  
• For modulators and  
amplifiers in TV and VCR tuners  
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
Marking Ordering Code  
Pin Configuration  
Package  
BF 771  
RBs  
Q62702-F1225  
1 = B  
2 = E  
3 = C  
SOT-23  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
12  
20  
20  
2
V
CEO  
CES  
CBO  
EBO  
I
I
80  
10  
mA  
mW  
°C  
C
Base current  
B
Total power dissipation  
P
tot  
T
69 °C  
580  
S
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
150  
j
- 65 ... + 150  
- 65 ... + 150  
A
stg  
Thermal Resistance  
1)  
Junction - soldering point  
R
140  
K/W  
thJS  
1) T is measured on the collector lead at the soldering point to the pcb.  
S
Semiconductor Group  
1
Dec-11-1996  

BF771 替代型号

型号 品牌 替代类型 描述 数据表
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TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | SOT-323