Datasheet > BF776-H6327

BF776-H6327

更新时间： 2024-11-11 12:28:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
6页	510K
描述
High Performance NPN Bipolar RF Transistor

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中文翻译

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数据手册

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BF776-H6327 数据手册

BF776

High Performance NPN Bipolar RF Transistor

• High performance low noise amplifier

• Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz

• For a wide range of non automotive applications

such as WLAN, WiMax, UWB, Bluetooth, GPS,

SDARs, DAB, LNB, UMTS/LTE and ISM bands

• Easy to use standard package with visible leads

• Pb-free (RoHS compliant) package

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BF776

Marking

R3s

Pin Configuration

1=B 2=E 3=C 4=E

Package

SOT343

Maximum Ratings at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Collector-emitter voltage

CEO

T = 25 °C

4.0

3.5

1.2

T = -55 °C

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

CES

CBO

EBO

°C

200

tot

T ≤ 90°C

150

-55 ... 150

Junction temperature

Ambient temperature

Storage temperature

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

≤ 300

Unit

K/W

thJS

¹T is measured on the emitter lead at the soldering point to the pcb

²For calculation of R

please refer to Application Note Thermal Resistance

thJA

2010-04-06

12 3 4 5 6

中文翻译

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