Datasheet > BF820

BF820

更新时间： 2024-10-01 08:52:23

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
2页	588K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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BF820 数据手册

BF820/ BF822

TRANSISTOR (NPN)

SOT-23

FEATURES

Low current (max.50 mA)

1. BASE

High voltage (max.300V)

2. EMITTER

3. COLLECTOR

Telephony and professional communication equipment.

MARKING: BF820:1V, BF822: 1X

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

BF820

BF822

BF820

BF822

300

250

300

250

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

P_C

0.25

150

T_j

℃

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

300

250

I_C=100μA, I_E=0

BF820

BF822

BF820

BF822

Collector-base breakdown voltage

V_(BR)CBO

I_C=1mA, I_B=0

300

250

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CEO

V_(BR)EBO

I_CBO

I_E= 100μA, I_C=0

V_CB=200V,I_E=0

V_EB= 5V,I_C=0

0.01

0.05

μA

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE= 20V,I_C=25mA

I_C=30mA,I_B= 5mA

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

0.6

1.6

MHz

f_T

V_CE=10V, I_C= 10mA,f=100MHz

V_CB=30V,I_E=0,f=1MHz

Collector output capacitance

C_ob

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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