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BF799-E6433 PDF预览

BF799-E6433

更新时间: 2024-11-11 21:00:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
6页 65K
描述
Transistor

BF799-E6433 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.61
最大集电极电流 (IC):0.035 A配置:Single
最小直流电流增益 (hFE):35最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.28 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

BF799-E6433 数据手册

 浏览型号BF799-E6433的Datasheet PDF文件第2页浏览型号BF799-E6433的Datasheet PDF文件第3页浏览型号BF799-E6433的Datasheet PDF文件第4页浏览型号BF799-E6433的Datasheet PDF文件第5页浏览型号BF799-E6433的Datasheet PDF文件第6页 
BF799  
NPN Silicon RF Transistor  
For linear broadband amplifier  
application up to 500 MHz  
2
3
SAW filter driver in TV tuners  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
1
1)  
Type  
Marking  
Pin Configuration  
Package  
BF799  
LKs  
1 = B  
2 = E  
3 = C  
SOT23  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
20  
30  
30  
3
V
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
CEO  
CES  
CBO  
EBO  
35  
50  
15  
280  
mA  
I
I
I
C
Peak collector current,  
Peak base current  
CM  
BM  
mW  
°C  
Total power dissipation  
P
tot  
2)  
T 69 °C  
S
150  
Junction temperature  
Storage temperature  
T
T
j
-65 ... 150  
stg  
Thermal Resistance  
3)  
Junction - soldering point  
R
290  
K/W  
thJS  
1Pb-containing package may be available upon special request  
2T is measured on the collector lead at the soldering point to the pcb  
S
3For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
2007-04-20  
1

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