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BFR182W PDF预览

BFR182W

更新时间: 2024-11-17 22:27:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体放大器小信号双极晶体管射频小信号双极晶体管光电二极管
页数 文件大小 规格书
7页 60K
描述
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

BFR182W 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.22Is Samacsys:N
其他特性:LOW NOISE最大集电极电流 (IC):0.035 A
基于收集器的最大容量:0.5 pF集电极-发射极最大电压:12 V
配置:SINGLE最高频带:L BAND
JESD-30 代码:R-PDSO-G3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):8000 MHz
Base Number Matches:1

BFR182W 数据手册

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BFR 182W  
NPN Silicon RF Transistor  
• For low noise, high-gain broadband amplifiers at  
collector currents from 1mA to 20mA  
f = 8GHz  
T
F = 1.2dB at 900MHz  
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
Marking Ordering Code  
Pin Configuration  
Package  
BFR 182W RGs  
Q62702-F1492  
1 = B  
2 = E  
3 = C  
SOT-323  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
12  
20  
20  
2
V
CEO  
CES  
CBO  
EBO  
I
I
35  
4
mA  
mW  
°C  
C
Base current  
B
Total power dissipation  
P
tot  
T
90 °C  
250  
S
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
150  
j
- 65 ... + 150  
- 65 ... + 150  
A
stg  
Thermal Resistance  
1)  
Junction - soldering point  
R
thJS  
240  
K/W  
1) T is measured on the collector lead at the soldering point to the pcb.  
S
Semiconductor Group  
1
Dec-11-1996  

BFR182W 替代型号

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