Datasheet > BF622

BF622

更新时间： 2024-09-14 22:27:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管电视高压
页数	文件大小	规格书
4页	133K
描述
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)

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BF622 数据手册

NPN Silicon High-Voltage Transistor

BF 622

● Suitable for video output stages in TV sets

● High breakdown voltage

● Low collector-emitter saturation voltage

● Low capacitance

● Complementary type: BF 623 (PNP)

Package¹⁾

SOT-89

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

BF 622

Q62702-F1052

Maximum Ratings

Parameter

Symbol

Values

250

Unit

Collector-emitter voltage

Collector-base voltage

Collector-emitter voltage, RBE = 2.7 kΩ

Emitter-base voltage

Collector current

CE0

CB0

CER

EB0

Peak collector current

100

Total power dissipation, T

= 120 ˚C

tot

Junction temperature

150

˚C

Storage temperature range

Tstg

– 65 … + 150

Thermal Resistance

Junction - ambient²⁾

th JA

th JS

≤ 90

≤ 30

K/W

Junction - soldering point

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm²Cu.

5.91

Semiconductor Group

12 3 4

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