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BF623

更新时间: 2024-11-04 22:27:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管电视高压放大器
页数 文件大小 规格书
4页 133K
描述
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)

BF623 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:not_compliant风险等级:5.89
最大集电极电流 (IC):0.02 A配置:Single
最小直流电流增益 (hFE):50JESD-609代码:e0
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):1 W子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
标称过渡频率 (fT):60 MHz

BF623 数据手册

 浏览型号BF623的Datasheet PDF文件第2页浏览型号BF623的Datasheet PDF文件第3页浏览型号BF623的Datasheet PDF文件第4页 
PNP Silicon High-Voltage Transistor  
BF 623  
Suitable for video output stages in TV sets  
High breakdown voltage  
Low collector-emitter saturation voltage  
Low capacitance  
Complementary type: BF 622 (NPN)  
Package1)  
SOT-89  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
1
2
3
BF 623  
DB  
Q62702-F1053  
B
C
E
Maximum Ratings  
Parameter  
Symbol  
Values  
250  
250  
250  
5
Unit  
Collector-emitter voltage  
Collector-base voltage  
Collector-emitter voltage, RBE = 2.7 k  
Emitter-base voltage  
Collector current  
V
CE0  
CB0  
CER  
EB0  
V
V
V
V
IC  
50  
mA  
Peak collector current  
I
CM  
100  
1
Total power dissipation, T  
S
= 120 ˚C  
P
tot  
W
Junction temperature  
T
j
150  
˚C  
Storage temperature range  
Tstg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient2)  
R
th JA  
th JS  
90  
30  
K/W  
Junction - soldering point  
R
1)  
For detailed information see chapter Package Outlines.  
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.  
2)  
5.91  
Semiconductor Group  
1

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