Datasheet > BF623-Q

BF623-Q

更新时间： 2024-03-03 10:09:36

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
9页	204K
描述
PNP high-voltage transistorProduction

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中文翻译

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BF623-Q 数据手册

BF623-Q

PNP high-voltage transistor

20 July 2023

Product data sheet

1. General description

PNP high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic

package.

NPN complement: BF622-Q

2. Features and benefits

•

Low current (max. -50 mA)

•

High voltage (max. -250 V)

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Video output stages

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-250

I_C

collector current

DC current gain

-50

h_FE

V_CE= -20 V; I_C= -25 mA; T_amb= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

emitter

Simplified outline

Graphic symbol

collector

base

sym079

SOT89

12 3 4 5 6 7...9

中文翻译

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